Introduction of sputtering target material

Magnetron sputtering coating is a new physical gas phase coating method. Compared with the earlier evaporation coating method, it has obvious advantages in many aspects. As a developed and mature technology, magnetron sputtering has been used in many fields.

Magnetron sputtering principle: a orthogonal magnetic field and electric field are added between the sputtering target (cathode) and anode, and the required inert gas (usually Ar gas) is filled into the high vacuum chamber. The permanent magnet forms a 250-350 gauss magnetic field on the surface of the target material, and the orthogonal electromagnetic field is formed with the high voltage electric field. Under the action of electric field, Ar gas ionization into positive ions and electrons, target and has certain negative pressure, from the action of the target from the extremely affected by magnetic field and increase of working gas ionization probability, form a high density plasma near the cathode, Ar ion under the action of lorentz force, speed up to fly to the target surface, bombarding target surface at a high speed, The atoms sputtered on the target are separated from the target surface and deposited on the substrate with high kinetic energy according to the principle of momentum conversion. Magnetron sputtering is generally divided into two kinds: tributary sputtering and radio frequency sputtering. The principle of tributary sputtering equipment is simple, and the rate is fast when sputtering metal. Radio frequency sputtering is more widely used. In addition to sputtering conductive materials, it can also sputter non-conductive materials. At the same time, it also carries out reactive sputtering to prepare compound materials such as oxides, nitride compounds and carbides. If the frequency of radio frequency is increased, it will become microwave plasma sputtering. Currently, the commonly used microwave plasma sputtering is electron cyclotron resonance (ECR).

Target materials for magnetron sputtering coating:

Metal sputtering target material, coating alloy sputtering coating material, ceramic sputtering coating material, boride ceramic sputtering target materials, carbide ceramic sputtering target material, fluoride ceramic sputtering target material, nitride ceramic sputtering target materials, oxide ceramic target, selenide ceramic sputtering target material, silicide ceramic sputtering target materials, sulfide ceramic sputtering target material, Telluride ceramic sputtering target material, other ceramic target material, chromium doped silicon monoxide ceramic target material (Cr-SiO), indium phosphate target material (InP), lead arsenide target material (PBAS), indium arsenide target material (InAs). High purity and high density sputtering target: Sputtering target (purity: 99.9%-99.999%)