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Tantalum Target

tantalum target

Principle of Tantalum Target

Tantalum is widely used in electrolyte capacitor manufacture because of its ability to form thin oxides and the protective effect of oxide film. Evaporation method was used in the early stage of Tantalum deposition, but physical vapor deposition method such as sputtering coating method which appeared in the late 1960s replaced evaporation method as a better method for thin film deposition.

ta target

Physical vapor deposition is a method in which ionized argon atoms strike a material source called a target material by means of electromagnetic mechanics, thus hitting out of the metal target atom, and then the target atoms will deposit on the substrate to form a layer of film.

Our Tantalum Target product

Tantalum Sputtering Target
Dimension: Diameter 50-400mm X Thickness 3-28mm
Grade: R05200 R05400 R05252 (Ta-2.5W) R05255 (Ta-10W)
Purity: ≥99.95% (Maximum 99.99%)
Recrystalize: Minimum 95%
Grain Size: Minimum 40um
Surface Roughness: Maximum Ra0.4
Flatness: 0.1mm or maximum 0.10%
Tolerance: Diameter +/-0.254mm
If the customer has special requirement, we can find the best solution to fulfill it.
Tantalum Target products of Western Alloys are produced through EB electron bombardment, rolling and annealing process to Tantalum Ingots.
The target produced through this method has good internal structure, with uniform crystal structure, texture and energy distribution.

Application of Tantalum Sputtering Target

Tantalum Sputtering Target material is made of Tantalum Sheets processed by pressure, with the characteristics of high purity, small grain size, good recrystallization structure and consistency of the three axes.
Tantalum Sputtering Target is widely used in the optoelectronic industry and semiconductor industry. It is mainly used for sputtering deposition of optical fiber, semiconductor wafer, integrated circuit, cathode sputtering coating and high vacuum getter active material, etc. It is also an important material in thin film technology.